半導体装置

Semiconductor device

Abstract

【課題】半導体パッケージ内のGNDパッドが、寄生インダクタンス成分を有する事によるGNDワイヤ間アイソレーション悪化のフィルタ回路に対し寄生成分を考慮した回路とする事で、カットオフ特性を良くしたフィルタ回路の提供。 【解決手段】半導体チップ20上に形成されたフィルタ回路の入力側にインダクタL4を設け、更にインダクタL5を介して直列共振回路C2、L2を並列接続し、合わせて並列共振回路C3、L3を直列接続する事で、並列共振回路は減衰させたい高調波等の周波数成分の通過を阻止する構成となり、カットオフ特性を満足させる。 【選択図】図4
<P>PROBLEM TO BE SOLVED: To provide a filter circuit in which a cutoff property is improved by considering a parasitic component for the filter circuit where GND-wire isolation is deteriorated by having a parasitic inductance component in a GND pad inside a semiconductor package. <P>SOLUTION: An inductor L4 is provided at an input side of a filter circuit formed on a semiconductor chip 20 and further, serial resonance circuits C2, L2 are connected in parallel via an inductor L5. At the same time, parallel resonance circuits C3, L3 are connected in series. Therefore, the parallel resonance circuit is configured to stop passing of a frequency component of a high harmonic wave or the like desired to be attenuated, thereby satisfying a cutoff property. <P>COPYRIGHT: (C)2011,JPO&INPIT

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    KR-101752565-B1June 29, 2017타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드가드 링이 공진 회로와 커플링된 반도체 디바이스
    US-9705466-B2July 11, 2017Taiwan Semiconductor Manufacturing Company, Ltd.Semiconductor device with guard ring coupled resonant circuit