半導体記憶装置

Semiconductor memory

Abstract

【課題】正確なフォーミング動作を実行可能とされた半導体記憶装置を提供する。 【解決手段】半導体記憶装置は、メモリセルアレイ11と、選択されたワード線WLに電圧を印加するロウ制御回路12と、ワード線WLに電圧を印加するカラム制御回路13とを備える。ロウ制御回路12は、フォーミング動作時に、ワード線WLに流れるリーク電流Ileakを検知する検知回路121を備える。カラム制御回路13は、フォーミング動作時に、ビット線BLに定電流Ibを供給する電流供給回路131と、フォーミング動作時に、検知回路121にて検知されたリーク電流Ileakに基づき、リーク電流Ileakと同じ電流値の補償電流Iaをビット線BLに供給する補償回路132とを備える。 【選択図】図3
PROBLEM TO BE SOLVED: To provide a semiconductor memory that executes accurate forming operation.SOLUTION: The semiconductor memory comprises a memory cell array 11, a row control circuit 12 for applying a voltage to a selected word line WL, and a column control circuit 13 for applying a voltage to a selected word line WL. The row control circuit 12 comprises a detection circuit 121 for detecting a leak current Ileak flowing through the word line WL in the forming operation. The column control circuit 13 comprises a current supply circuit 131 for supplying a constant current Ib to the bit line BL in the forming operation, and a compensation circuit 132 for supplying the compensation current Ia of the same current value as the leak current Ileak to the bit line BL on the basis of the leak current Ileak detected by the detection circuit 121 in the forming operation.

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Cited By (7)

    Publication numberPublication dateAssigneeTitle
    JP-2014146406-AAugust 14, 2014Toshiba Corp, 株式会社東芝半導体記憶装置
    JP-2016514337-AMay 19, 2016マイクロン テクノロジー, インク., マイクロン テクノロジー, インク.装置、検知回路、およびワード線電圧の上昇を補償する方法
    US-8923032-B2December 30, 2014Panasonic CorporationCrosspoint nonvolatile memory device and forming method thereof
    US-9013912-B2April 21, 2015Kabushiki Kaisha ToshibaNonvolatile semiconductor memory device and method of forming same
    US-9053787-B2June 09, 2015Panasonic Intellectual Property Management Co., Ltd.Crosspoint nonvolatile memory device and method of driving the same
    US-9183925-B2November 10, 2015Panasonic Intellectual Property Management Co., Ltd.Variable resistance nonvolatile memory device and method of performing the forming operation
    US-9646685-B2May 09, 2017Samsung Electronics Co., Ltd.Resistive memory device, resistive memory, and operating method of the resistive memory device